Download Previous Year PTU University Question Paper of Analog Devices & Circuits BTEC-301 3rd Sem Batch 2012 Onwards B.Tech PTU May 2019 Question Paper
B.Tech.(Electronics Engg.) (2012 Onwards)
B.Tech.(ECE)/(Electronics & Computer Engg.)/(ETE) (2011 Onwards) (Sem.–3)
ANALOG DEVICES & CIRCUITS MAY 2019 PAPER
Subject Code : BTEC-301 M.Code : 57583
Time : 3 Hrs. Max. Marks : 60
Time : 3 Hrs. Max. Marks : 60
INSTRUCTIONS TO CANDIDATES :
1. SECTION-A is COMPULSORY consisting of TEN questions carrying TWO marks each.
2. SECTION-B contains FIVE questions carrying FIVE marks each and students have to attempt any FOUR questions.
3. SECTION-C contains THREE questions carrying TEN marks each and students have to attempt any TWO questions
Analo Devices & Circuits BTEC-301 3rd Sem Batch 2012 Onwards B.Tech May 2019 Question Paper
SECTION-A
Q1. Answer Briefly.
Q1. Write briefly :
a) Explain how Zener diode can be used as a voltage regulator.
b) What is the principle behind the working of an oscillator?
c) Explain the working of a transistor as a switch.
d) What do you mean by dc load line?
e) Give the V-I characteristics of PN diode.
f) Calculate Ic and IE for a transistor that has dc = 0.99 and IB = 150A. Determine the value of dc for the transistor,
g) Define Transconductance of MOSFET.
h) What is pinch off voltage?
i) State Barkhausen criteria for oscillators.
j) What is diffusion capacitance?
SECTION-B
Q2. Attempt any FOUR questions. 5×4=20
Q2. Explain the effect of using negative feedback on various parameters of amplifiers.
Q3. What are h-parameters? Explain how these are used for making equivalent transistor model.
Q4. Discuss the factors involved in the selection of Ic, Rc and RE for a single stage common emitter BJT amplifier circuit, using voltage divider bias.
Q5. Explain in detail with diagrams, the difference between LED and Photo-diodes. Q6. Explain construction, operation and characteristics of JFETs.
SECTION-C
Q3. Attempt any TWO questions. 2×10=20
Q7. Explain the construction and working of MOSFET.
Q8. Explain the working of Colpitts oscillator. Derive the expression for its frequency. Q9. Describe in detail with diagram and characteristics:
a) UJT
b) RC phase shift oscillator.
Analo Devices & Circuits BTEC-301 3rd Sem Batch 2012 Onwards B.Tech May 2019 Question Paper
Get Started
https://www.youtube.com/watch?v=y_wJffQkeWo&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=6&t=0shttps://www.youtube.com/watch?v=mV41CMWonN4&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=7&t=0shttps://www.youtube.com/watch?v=M_RR6LVICp0&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=20&t=0shttps://www.youtube.com/watch?v=3BNQLUnbNpYhttps://www.youtube.com/watch?v=ZDkyNOzoG8A&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=8&t=0shttps://www.youtube.com/watch?v=s0LVPE0Q3LE&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=14&t=0s
Section a Analog Devices & Circuits BTEC-301 3rd Sem B.Tech May 2019 Question Paper
Explain how Zener diode can be used as a voltage regulator.
Zener diode can be used as a voltage regulator.
What is the principle behind the working of an oscillator?
Principle behind the working of an oscillator.
Explain the working of a transistor as a switch.
Working of a transistor as a switch.
What do you mean by dc load line?
dc load line.
Give the V-I characteristics of PN diode.
V-I characteristics of PN diode.
Find Ic and IE for a transistor that has dc = 0.99 and IB = 150A. Determine the value of dc for the transistor,
Define Transconductance of MOSFET.
Transconductance of MOSFET.
Pinch off voltage.
State Barkhausen criteria for oscillators.
Barkhausen criteria for oscillators.
What is diffusion capacitance?
Diffusion capacitance.
Analog Devices & Circuits 3rd Sem B.Tech May 2019 Question Paper Click Here
Section B :Power Electronics BTEE-504 5th Sem Batch 2011 B.Tech PTU April 2019 Paper
Explain the effect of using negative feedback on various parameters of amplifiers.
Effect of using negative feedback on various parameters of amplifiers.
What are h-parameters? Explain how these are used for making equivalent transistor model.
h-parameters of transistor model
Factors involved in the selection of Ic, Rc and RE for a single stage common emitter BJT amplifier circuit, using voltage divider bias.
Explain in detail with diagrams, the difference between LED and Photo-diodes
Difference between LED and Photo-diodes.
Explain construction, operation and characteristics of JFETs.
Construction, operation and characteristics of JFETs.
Analog Devices & Circuits 3rd Sem B.Tech May 2019 Question Paper Click Here
Analog Devices & Circuits BTEC-301 3rd Sem B.Tech May 2019 Question Paper
Get Started
https://www.youtube.com/watch?v=UHX6f8TIvX8https://www.youtube.com/watch?v=M_RR6LVICp0https://www.youtube.com/watch?v=mV41CMWonN4https://www.youtube.com/watch?v=s0LVPE0Q3LE&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=14&t=0s
Section c :- Analog Devices & Circuits BTEC-301 3rd Sem B.Tech May 2019 Question Paper
Explain the construction and working of MOSFET.
Construction and working of MOSFET.
Explain the working of Colpitts oscillator. Derive the expression for its frequency.
Working of Colpitts oscillator. .
Describe in detail with diagram and characteristics UJT
Detail with diagram and characteristics UJT
RC phase shift oscillator.
Analog Devices & Circuits 3rd Sem B.Tech May 2019 Question Paper Contact Us
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